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DNT2-J1J Ultra-Rapid Semiconductor Fuse: 690VAC aR High-Speed Fuse for Power Electronics

Model No.:
DNT2-J1J
Rated Voltage:
690V AC
Current Range:
350-800A
Breaking Capacity:
100kA
Protection Category:
aR
Standards:
GB/T 13539.4、IEC 60269-4
Certifications:
CCC CE TUV
Description

DNT2-J1J Semiconductor Fuse Overview

The GRL DNT2-J1J is a paramount solution for protecting sensitive power semiconductor devices in modern electrical systems. As an Ultra-Rapid Fuse (aR fuse link), the DNT2-J1J is specifically engineered to deliver instantaneous short-circuit protection for critical components like IGBTs, thyristors (SCR protection), diodes, and GTOs. Designed for high-performance power electronics protection within 690VAC systems, this high-speed fuse is critical for maintaining system reliability, minimizing downtime, and preventing catastrophic failure. Its advanced design ensures maximum safety for your high-capacity equipment.

DNT2-J1J Semiconductor Fuse Technical Parameters

Model No. Size Ue
(V)
In
(A)
I²t(A²S) 0.5In
Power
dissipation(W)
0.8In
Power
dissipation(W)
1.0In
Power
dissipation(W)
Weight
(g)
Mounting
Pre-
Arcing
Fusing
DNT2-J1J-350A/690V AC 2 690 350 860 7600 11 35 60 588±3% M10
21±1N.m
DNT2-J1J-400A/690V AC 2 400 14800 104200 12 38 64
DNT2-J1J-450A/690V AC 2 450 19400 134000 13 41 71
DNT2-J1J-500A/690V AC 2 500 26200 185000 14 43 75
DNT2-J1J-550A/690V AC 2 550 34500 240000 15 48 80
DNT2-J1J-630A/690V AC 2 630 48600 341000 17 53 89
DNT2-J1J-710A/690V AC 2 710 65200 455000 18 55 93
DNT2-J1J-800A/690V AC 2 800 91000 636000 20 61 103

DNT2 J1J

DNT2-J1J Semiconductor Fuse Features

The core distinguishing feature of the DNT2-J1J is its internal construction, optimized for maximum speed and current-limiting action. It utilizes a special pure silver fuse element, enclosed in a ceramic body filled with granular quartz sand. This specific design ensures the Ultra-Rapid operation necessary for protecting semiconductors. The aR utilization class indicates its specialization in providing partial-range breaking capacity—it is solely focused on delivering extreme-speed short-circuit protection. The sophisticated construction enforces an extremely fast clearing time, measured in milliseconds, ensuring the fault is interrupted long before the energy can cause irreparable damage to the protected device.

DNT2-J1J Semiconductor Fuse Advantages

The DNT2-J1J is engineered to be the ultimate guardian for your power semiconductor components, offering benefits that translate directly into lower operational costs and enhanced system safety:

  • Superior Semiconductor Protection: The DNT2-J1J guarantees protection by having an exceptionally low I²t value (Energy Let-Through). This means the fuse melts and clears the fault faster than the semiconductor’s thermal withstand capability, making it an essential component for achieving Type 2 coordination.
  • Robust Current-Limiting Action: It acts as a premium Current-Limiting Fuse, actively restricting the peak current let-through during a fault, which is crucial for preventing damage to adjacent components and dramatically reducing system downtime.
  • High Rated Voltage and Capacity: With a robust 690VAC rating and a high capacity fuse current range up to 1600A for the series, it is perfectly suited for medium-voltage industrial and commercial systems, including complex AC drive protection.
  • International Compliance: Adherence to the stringent IEC 60269-4 standard ensures reliable and consistent performance and global applicability.

DNT2-J1J Semiconductor Fuse Applications

The DNT2-J1J Ultra-Rapid Fuse is indispensable in any system utilizing sensitive power semiconductor devices where maximum protection is non-negotiable. This high-performance fuse is ideal for:

  • Variable Frequency Drives (VFDs)
  • UPS Systems (Uninterruptible Power Supplies)
  • Power Converters and Rectifier protection circuits
  • Soft Starters and other Motor Control Systems
  • Photovoltaic (PV) Inverters and other renewable energy applications
  • Industrial Power Supplies and High-Power DC Circuits

DNT2-J1J Semiconductor Fuse FAQs

Q: What is the main difference between an aR fuse like the DNT2-J1J and a standard gG/gL fuse?

A: This is a great question often asked when designing electrical panels. The DNT2-J1J, as an aR fuse, is an Ultra-Rapid Fuse designed for partial-range breaking capacity, meaning it specializes in extremely fast short-circuit protection. Standard gG/gL fuses are slower and designed for general-purpose protection, covering both overload and short-circuit conditions, but they are not fast enough to protect sensitive semiconductors. The DNT2-J1J’s sheer speed is the key to reliable power semiconductor protection.

Q: Why is the I²t value so important for the DNT2-J1J?

A: The I²t value is arguably the single most important parameter for this type of high-speed fuse. It represents the total heat energy (measured in Ampere-squared seconds) let-through by the fuse during a fault. For your power semiconductor to be safely protected, the fuse’s clearing I²t let-through must be significantly lower than the maximum I²t withstand capability of the device it is protecting. The DNT2-J1J is specifically engineered to achieve a minimal low I²t value, ensuring the semiconductor survives the fault.

Q: Does the DNT2-J1J provide overload protection?

A: As an aR fuse, the DNT2-J1J provides excellent short-circuit protection but is generally considered a partial-range fuse and does not have the same reliable overload protection as a full-range (gG/gL or gR) fuse. In circuits where prolonged overloads are a concern, it should be used in conjunction with another overload protection device, such as a circuit breaker or relay, to ensure comprehensive protection for the entire circuit.

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