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GRL DNT2-J1N Semiconductor Fuse: The Ultimate Ultra-Rapid Semiconductor Protection Fuse for 690V Systems

Model No.:
DNT2-J1N
Rated Voltage:
690V AC
Current Range:
350-800A
Breaking Capacity:
100kA
Protection Category:
aR
Standards:
GB/T 13539.4、IEC 60269-4
Certifications:
CCC CE TUV
Description

DNT2-J1N Semiconductor Fuse Overview

The DNT2-J1N Fuse is a high-performance current limiting fuse link meticulously designed to comply with the stringent IEC 60269-4 standard, earning its designation as an aR Fuse Link (short-circuit protection only, ultra-rapid).

In contemporary high-power systems—such as those found in renewable energy and heavy industry—sensitive power semiconductor devices are vulnerable to catastrophic damage from short-circuit faults. The DNT2-J1N acts as the instantaneous defense mechanism, interrupting fault currents significantly faster than general-purpose fuses. This ultra-rapid response is critical for preventing thermal runaway and subsequent damage, directly contributing to enhanced system reliability and dramatically reduced minimize downtime.

DNT2-J1N Semiconductor Fuse Technical Parameters

Model No. Size Ue
(V)
In
(A)
 I²t(A²S) 0.5In
Power
dissipation(W)
0.8In
Power
dissipation(W)
1.0In
Power
dissipation(W)
Weight
(g)
Mounting
Pre-Arcing Fusing
DNT2-J1N-350A/690V AC 2 690 350 860 7600 11 35 60 625±3% M10
21±1N.m
DNT2-J1N-400A/690V AC 2 400 14800 104200 12 38 64
DNT2-J1N-450A/690V AC 2 450 19400 134000 13 41 71
DNT2-J1N-500A/690V AC 2 500 26200 185000 14 43 75
DNT2-J1N-550A/690V AC 2 550 34500 240000 15 48 80
DNT2-J1N-630A/690V AC 2 630 48600 341000 17 53 89
DNT2-J1N-710A/690V AC 2 710 65200 455000 18 55 93
DNT2-J1N-800A/690V AC 2 800 91000 636000 20 61 103

DNT2 J1N

DNT2-J1N Semiconductor Fuse Features

The superior performance of the DNT2-J1N stems from its advanced internal construction, built for precision and resilience:

  1. Pure Silver Melt Elements: The fuse element is crafted from pure silver with carefully calculated constrictions. This precise design is paramount for achieving the ultra-rapid breaking characteristic, ensuring the element vaporizes almost instantly under high fault currents.
  2. High-Density Ceramic Body: Encased in a robust ceramic tube, the fuse can safely withstand the extreme internal pressures and thermal shock generated during a 100kA High Breaking Capacity interruption, ensuring electrical safety within compact power converter enclosures.
  3. Advanced Arc Quenching: The internal chamber is tightly packed with high-purity quartz sand, acting as an advanced arc quenching medium. This rapidly cools and extinguishes the fault arc, minimizing the total energy let-through and achieving the required low I²t value for effective semiconductor protection.

DNT2-J1N Semiconductor Fuse Advantages

The GRL DNT2-J1N offers quantifiable advantages that enhance asset longevity and operational efficiency:

  • Unmatched Component Preservation: By severely limiting both the peak current and the thermal energy (I²t) during a fault, the DNT2-J1N provides the ultimate IGBT protection and Thyristor Protection, significantly extending the lifespan of expensive power modules.
  • Guaranteed System Reliability: The ultra-rapid clearing time prevents cascade failures and minimizes damage to surrounding circuitry. This means faster, simpler repairs, directly addressing the goal to minimize downtime.
  • Superior Current Limiting Fuse Action: The fuse’s inherent design prevents fault currents from reaching their prospective peaks, protecting the entire upstream and downstream power circuitry.
  • Global Compliance: Full adherence to IEC 60269-4 ensures the DNT2-J1N is a universally recognized component for power electronics protection in global markets.

DNT2-J1N Semiconductor Fuse Applications

The DNT2-J1N Series is essential wherever sensitive semiconductors operate within 690V AC high-power circuits. Its core applications include:

  1. Variable Frequency Drives (VFDs): As the primary VFD Fuse, protecting the input rectifier and output inverter bridges in motor control applications.
  2. Uninterruptible Power Supplies (UPS): Providing essential UPS System Protection in the rectifier and inverter stages of critical backup power systems.
  3. Renewable Energy Inverters: Crucial for PV Inverter Protection and the high-power converters used in wind turbine generators and grid-tie applications.
  4. Power Converters and Rectifiers: Used in Industrial Power Supplies and large-scale battery charging systems for rectifier protection circuit integrity.
  5. Motor Control Systems: Integral as the main Soft Starter Fuse for high-current AC motor control panels.

DNT2-J1N Semiconductor Fuse FAQs

Q: How is the DNT2-J1N designed to handle high-current transients?

A: The DNT2-J1N is categorized as aR, meaning it handles short-circuit faults instantaneously but is not designed for continuous overload protection. Its construction allows it to withstand normal operating surges and inrush currents without degradation, thanks to optimized melt element ratios. For circuits requiring both overload and short-circuit protection, complementary devices must be used.

Q: Where can I find the I^2t let-through curve data for the DNT2-J1N?

A: The precise low I^2t value and time-current characteristics are essential for proper coordination and semiconductor protection. Detailed I^2t curves for all current ratings (100A to 1600A) are available in the official GRL DNT2-J1N datasheet. Please contact our technical support team or download the product manual for exact figures to ensure optimal IGBT Protection selection.

Q: Does the DNT2-J1N require a separate fuse holder or base?

A: The DNT2-J1N is a blade/bolt-down style fuse link (often referred to as Square Body). It is designed to be securely mounted directly onto busbars or into specific fuse switch disconnectors designed to accept this body style, ensuring robust electrical safety and high contact integrity in the 690V environment.

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