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GRL DNT2-R1N aR Ceramic Semiconductor Fuse Links AC 1250V 250A-800A 100kA Low Voltage Fuses

Model No.:
DNT2-R1N
Rated Voltage:
1250V AC
Current Range:
250~800A
Breaking Capacity:
100kA
Protection Category:
aR
Standards:
GB/T 13539.4 IEC 60269-4
Certifications:
CCC CE TUV
Description

DNT2-R1N Semiconductor Fuse Overview

The GRL DNT2-R1N Semiconductor Fuse is a next-generation Ultra-Rapid Fuse Link engineered by GRL Fuse to protect the most valuable and sensitive components in high-power conversion systems. Designed specifically for circuits up to 1250V AC Fuse, the DNT2-R1N sets a new benchmark in High Voltage Fuse performance. As a true aR Fuse, it provides instantaneous Short-Circuit Protection, which is non-negotiable for modern Power Electronics like high-current IGBTs and Thyristors. Its defining feature is the Extremely Low Value, ensuring that fault energy is limited to prevent thermal damage, guaranteeing superior System Reliability and extending component life.

 

DNT2-R1N Semiconductor Fuse Technical Parameters

Model No. Size In
(A)
I²t(A²S) 0.5In
Power
dissipation(W)
  0.8In
Power
dissipation(W)
1.0In
Power
dissipation(W)
Weight
(g)
Mounting
Pre-Arcing Fusing
DNT2-R1N-250A/1250V AC 2 250 11000 52000 24 44 80 930±3%   M10
21±1N.m
DNT2-R1N-315A/1250V AC 2 315 20000 94000 29 52 96
DNT2-R1N-350A/1250V AC 2 350 26000 122000 31 56 104
DNT2-R1N-400A/1250V AC 2 400 37000 174000 34 61 113
DNT2-R1N-450A/1250V AC 2 450 53000 248000 36 66 122
DNT2-R1N-500A/1250V AC 2 500 70000 328000 39 70 130
DNT2-R1N-550A/1250V AC 2 550 90000 422000 41 74 137
DNT2-R1N-630A/1250V AC 2 630 128000 600000 46 83 152
DNT2-R1N-710A/1250V AC 2 710 164000 693000 48 87 161
DNT2-R1N-800A/1250V AC 2 800 269000 1260000 54 97 178

DNT2-R1N Semiconductor Fuse Features

The DNT2-R1N’s unique construction is the key to its Ultra-Rapid performance:

  1. Optimized Fuse Element Design: Utilizes precision-punched pure silver elements embedded in high-density quartz sand. This maximizes the speed of melting and arc-extinction, making it a true Fast Acting Fuse.
  2. Superior Current Limiting Fuse Action: During a fault, the fuse melts so quickly that it generates a high arc voltage, which works to oppose the system voltage, rapidly forcing the current to zero. This active Current Limiting Fuse action protects the downstream devices.
  3. aR Characteristic: The fuse is calibrated to respond only to short-circuit faults, optimizing its speed for Power Semiconductor Protection. (FAQ Integration: Why is the DNT2-R1N an aR fuse? Because semiconductors have minimal tolerance for surge currents, they require the fastest possible Circuit Protection. The ‘aR’ characteristic ensures the fuse is optimized for this task, sacrificing overload protection for maximum short-circuit speed.)

DNT2-R1N Semiconductor Fuse Advantages

Maximize operational efficiency and safeguard investment with the DNT2-R1N.

  • Protect Your Capital: The Extremely Low Value is the single most important factor for preserving the silicon structure of your Thyristors and IGBTs, offering effective IGBT Protection and saving significant replacement costs.
  • Ready for High-Voltage Systems: With its native 1250V AC Fuse rating, this fuse is purpose-built for the challenging demands of high-voltage industrial and renewable energy power conversion.
  • Unmatched Safety and Compliance: The 100kA High Interrupting Capacity rating and adherence to IEC 60269-4 standards ensures safe, reliable, and compliant operation in even the highest fault current environments.

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