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GRL DNT3-J1R Semiconductor Fuse: The Ultimate 1500V Solution for Ultra-Rapid Semiconductor Protection

Model No.:
DNT3-J1R
Rated Voltage:
690V AC
Current Range:
500-1250A
Breaking Capacity:
100kA
Protection Category:
aR
Standards:
GB/T 13539.4、IEC 60269-4
Certifications:
CCC CE TUV
Description

DNT3-J1R Semiconductor Fuse Overview

Operating within the stringent aR Fuse Class, the DNT3-J1R is specifically designed for the instant and precise clearance of short-circuit faults. It provides essential protection for costly and sensitive components such as IGBTs (Insulated-Gate Bipolar Transistors) and next-generation SiC Protection (Silicon Carbide) modules. Its performance is defined by an Extremely Low I^2t Value, which guarantees minimal let-through energy during a fault. For system engineers, this translates directly to unparalleled System Reliability and quantifiable Downtime Reduction. The GRL DNT3-J1R High-Speed Fuse is not just a safety device; it is a critical investment in the longevity of your high-value Power Electronics Protection.

DNT3-J1R Semiconductor Fuse Technical Parameters

Model No. Size Ue
(V)
In
(A)
I²t(A²S) 0.5ln
Power
dissipation(W)
0.8ln
Power
dissipation(W)
1.0ln
Power
dissipation(W)
Weight
(g)
Mounting
Pre-
Arcing
Fusing
DNT3-J1R-500A/690V AC 3 690 500 22000 180000 16 49 82 930±3% M10
21±1N.m
DNT3-J1R-550A/690V AC 3 550 27000 180000 19 56 94
DNT3-J1R-630A/690V AC 3 630 37600 307000 21 63 105
DNT3-J1R-710A/690V AC 3 710 49500 403000 23 69 115
DNT3-J1R-800A/690V AC 3 800 68800 561500 25 76 129
DNT3-J1R-900A/690V AC 3 900 95000 773000 26 82 139
DNT3-J1R-1000A/690V AC 3 1000 125000 1022000 28 88 149
DNT3-J1R-1100A/690V AC 3 1100 174100 1131000 35 108 183
DNT3-J1R-1250A/690V AC 3 1250 248100 1600000 36 112 190

DNT3-J1R Semiconductor Fuse Features

The design of the DNT3-J1R Fuse integrates advanced material science with precise engineering to deliver microsecond-range protection:

  • Optimized Silver Melting Elements: Utilizes high-purity, precisely contoured silver elements designed to vaporize rapidly and simultaneously at predetermined points. This engineered geometry ensures the ultra-fast pre-arcing time necessary to function as an effective Current Limiting Fuse.
  • Rugged Square Body Fuse Structure: The pressure-resistant ceramic casing provides exceptional mechanical stability and thermal management. The design ensures the fuse remains stable under the severe thermal cycling and vibration encountered in Traction Converters and industrial environments.
  • Proprietary Arc Quenching Technology: The internal chamber is densely packed with chemically purified quartz sand. When a fault occurs, this filler rapidly cools and absorbs the arc energy, facilitating safe and quick interruption and preventing dangerous Overvoltage peaks that could damage adjacent circuitry—a key aspect of reliable DC Link Protection.
  • Integrated Monitoring: Features a visual indicator or striker pin compatibility for simple connection to external monitoring systems, enabling instant, remote fault notification and minimizing time spent on diagnostics.

DNT3-J1R Semiconductor Fuse Advantages

Choosing the GRL DNT3-J1R is a strategic decision that fortifies your high-power assets:

  1. Unbeatable Speed (aR Class): Acts faster than the inherent failure time of modern power semiconductors, offering true IGBT Protection and leading to significant component cost savings and maximized uptime.
  2. Highest Efficiency: The low wattage loss design ensures the High-Speed Fuse runs cooler, reducing energy waste and extending the operating lifespan of surrounding equipment within the electrical cabinet.
  3. Global Standard Compliance: Full adherence to IEC 60269-4 ensures the fuse is suitable for global deployment in large-scale international projects.
  4. Future-Ready 1500V DC Protection: Perfectly matched to the evolving need for higher voltage systems, making it the ideal component for next-generation energy and mobility infrastructure.

DNT3-J1R Semiconductor Fuse Applications

The robustness and precision of the DNT3-J1R make it indispensable in the world’s most critical high-voltage sectors:

  • Renewable Energy: The definitive Photovoltaic Fuse for utility-scale projects. Essential for DC 1500V Solar Inverter Protection, string-level fault isolation, and protecting Battery Energy Storage Systems (BESS).
  • Electric Vehicle Infrastructure: The core protection component within Ultra-Fast EV Charging Infrastructure (e.g., 800V DC fast chargers), ensuring the safe and reliable operation of the high-power Power Conversion stack for rapid E-Mobility.
  • Rail and Traction: Provides vital High-Speed Fuse protection within Traction Converters and onboard auxiliary power systems in electric trains, where high resistance to vibration and absolute safety are mandatory.
  • Heavy Industry & Automation: Used in high-power Medium Voltage Drives and large VFD Protection (Variable Frequency Drive) systems, where reliable Semiconductor Protection for industrial motors is mission-critical to maintaining continuous operations.

DNT3-J1R Semiconductor Fuse FAQs

Q: Why is the Extremely Low I^2t Value so critical for SiC and IGBT protection?

A: The I^2t value (Ampere-squared-seconds) is the amount of energy the fuse allows through during a fault before opening. Because power semiconductors like SiC and IGBTs have extremely low thermal limits, they can be destroyed by even tiny amounts of let-through energy. The GRL DNT3-J1R is engineered to minimize this value to an absolute minimum, ensuring the fuse operates before the semiconductor is damaged, providing true, reliable SiC Protection.

Q: Can this 1500V Fuse handle both AC and DC fault interruption?

A: Yes. The DNT3-J1R is rated for up to DC 1500V and AC 1500V. Interrupting DC fault current is technically more challenging than AC; the DNT3-J1R’s robust arc-quenching design is specifically optimized to safely and rapidly clear DC faults, making it ideal for the DC 1500V Fuse applications common in solar and energy storage.

Q: How does this High-Speed Fuse contribute to lower operating costs?

A: Beyond preventing the replacement of expensive semiconductors (the primary Downtime Reduction benefit), the Square Body Fuse design’s low resistance connections and high-efficiency core significantly reduce power loss (I^2R) during normal operation. Over the lifespan of a large-scale system, this reduction in heat and wasted energy translates into substantial operational savings and enhanced System Reliability.

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