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GRL DNT3-O1L Ultra-Rapid Semiconductor Fuse: 1000V AC Protection for Power Electronics

Model No.:
DNT3-O1L
Rated Voltage:
1000V AC
Current Range:
630-1250A
Breaking Capacity:
100kA
Protection Category:
aR
Standards:
GB/T 13539.4、IEC 60269-4
Certifications:
CCC CE TUV
Description

DNT3-O1L Semiconductor Fuse Overview

The GRL DNT3-O1L Ultra-Rapid Semiconductor Fuse is a high-performance high-voltage fuse link specifically engineered for advanced circuit protection of sensitive and costly power electronics devices. In today’s demanding high-power applications, such as large-scale renewable energy systems and sophisticated industrial control equipment, the speed and precision of fault interruption are non-negotiable.

The DNT3-O1L is a specialized fast-acting aR fuse designed to provide ultimate short-circuit protection for key semiconductor components like IGBTs, thyristors, and diodes. Operating at a rated voltage of 1000V AC, this fuse is an essential component for system reliability and longevity, conforming strictly to the IEC 60269-4 standard.

 

DNT3-O1L Semiconductor Fuse Technical Parameters

Model No. Size Ue
(V)
In
(A)
I²t(A²S) 0.5In
Power
dissipation(W)
0.8In
Power
dissipation(W)
1.0In
Power
dissipation(W)
Weight
(g)
Mounting
Pre-
Arcing
Fusing
DNT3-O1L-630A/1000V AC 3 1000 630 83500 490000 23 81 120 1250±3% M10
21±1N.m
DNT3-O1L-710A/1000V AC 3 710 115000 700000 24 84 125
DNT3-O1L-800A/1000V AC 3 800 170000 1050000 26 80 135
DNT3-O1L-900A/1000V AC 3 900 250000 1500000 27 85 145
DNT3-O1L-1000A/1000V AC 3 1000 340000 2050000 28.5 88.5 150
DNT3-O1L-1100A/1000V AC 3 1100 460000 2750000 29 91 155
DNT3-O1L-1250A/1000V AC 3 1250 575000 3400000 33 103 175

DNT3 O1L

DNT3-O1L Semiconductor Fuse Features

The superior protective performance of the DNT3-O1L is founded on its specialized internal construction, designed for minimum energy let-through.

Key Product Features:

  • Extremely Low I²t Value: The primary feature is the low I²t (Ampere-squared seconds) value. What is I²t and why is it crucial? It represents the thermal energy let-through during the fuse operation. The low value ensures that in the event of a fault, the fuse clears the current so quickly that the protected semiconductor components do not reach their destructive heat limit.
  • Ultra-Rapid Trip Time: Classified as an ultra-rapid fuse, the DNT3-O1L is engineered for lightning-fast operation, making it significantly quicker than general-purpose fuses when clearing fault currents. Every millisecond counts for IGBT protection.
  • Controlled Arc Voltage: Special design elements ensure the arc voltage generated during current interruption is kept low, preventing potentially damaging over-voltages from stressing the protected components.
  • Robust Construction: Features a ceramic tube with high thermal and mechanical strength, filled with high-purity silica sand for effective arc quenching and stable long-term performance.

DNT3-O1L Semiconductor Fuse Advantages

Selecting the GRL DNT3-O1L fuse is an investment in maximizing equipment lifespan and operational safety.

  • Maximum Component Lifespan: By delivering precise, low I²t protection, the fuse effectively prevents thermal and electrical overstress, significantly extending the service life of expensive power electronics modules.
  • Operational Safety: The high breaking capacity of 100kA ensures safe interruption of even the highest prospective short-circuit currents in the 1000V AC system, isolating faults reliably.
  • Global Interchangeability: The product dimensions often adhere to industry-standard sizes, facilitating replacement and design-in processes in systems using NH-type fuses (Size 3 equivalent).
  • Optimized Power Loss: Engineered for low power loss under normal operating conditions, contributing to the overall system efficiency and reduced heat generation in power distribution units.

DNT3-O1L Semiconductor Fuse Applications

The DNT3-O1L Ultra-Rapid Semiconductor Fuse is indispensable in high-power applications requiring reliable overcurrent protection.

  • New Energy Sector: Core circuit protection in Photovoltaic (PV) inverters and Energy Storage Systems (ESS), where it safeguards the critical DC/AC power conversion stages.
  • Industrial Power: Used extensively in Variable Frequency Drives (motor drives), Soft Starters, Uninterruptible Power Supplies (UPS), and high-current power rectifiers for industrial control.
  • Transportation: Provides robust protection for high-voltage power supplies and converters in electric vehicle (EV) charging stations and modern rail transportation systems, where vibration resistance is key.
  • Power Distribution: Providing ultimate low I²t protection within advanced power distribution units and switchgear to prevent widespread damage from critical faults.

DNT3-O1L Semiconductor Fuse FAQs

Q: What is the main difference between an aR fuse and a gG fuse?

A: The DNT3-O1L is an aR fuse, which is a partial-range breaking fuse dedicated solely to short-circuit protection for semiconductor components. It offers an extremely fast-acting response to high fault currents. A gG fuse is a general-purpose fuse that provides full-range protection, covering both short-circuit and low-level, prolonged overload conditions, but it is not fast enough to protect semiconductors.

Q: Can this 1000V AC fuse be used in DC circuits?

A: While primarily rated for 1000V AC, the application of any AC fuse in a DC system requires careful consideration. DC current creates a much harder-to-extinguish arc. Users must consult GRL’s technical data to ensure the specific part number’s DC voltage rating and time-current characteristics are suitable for the application to guarantee safe circuit protection.

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