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GRL DNT3-O1N Ultra-Rapid aR Semiconductor Fuse: The 1000V AC Benchmark for Power Semiconductor Protection

Model No.:
DNT3-O1R
Rated Voltage:
1000V AC
Current Range:
630-1250A
Breaking Capacity:
100kA
Protection Category:
aR
Standards:
GB/T 13539.4、IEC 60269-4
Certifications:
CCC CE TUV
Description

DNT3-O1N Semiconductor Fuse Overview

The GRL DNT3-O1N Ultra-Rapid Fuse series represents the pinnacle of Power Semiconductor Protection technology for high-voltage alternating current (AC) systems. Meticulously engineered as an aR Fuse (partial range breaking capacity), the DNT3-O1N is the definitive defense mechanism for your most sensitive and expensive power electronics components. Rated for a robust 1000V AC and featuring an unmatched 100kA High Breaking Capacity (HBC), this High-Speed Fuse guarantees lightning-fast Fault Clearance, ensuring superior system integrity and maximizing your Electrical System Reliability. The DNT3-O1N is the essential component for safeguarding IGBTs, Thyristors, and other critical devices in modern, high-power industrial and renewable energy infrastructure.

DNT3-O1N Semiconductor Fuse Technical Parameters

Model No. Size Ue
(V)
In
(A)
I²t(A²S) 0.5In
Power
dissipation(W)
0.8In
Power
dissipation(W)
1.0In
Power
dissipation(W)
Weight
(g)
Mounting
Pre-
Arcing
Fusing
DNT3-O1N-630A/1000V AC 3 1000 630 83500 490000 23 81 120 1230±3% M10
21±1N.m
DNT3-O1N-710A/1000V AC 3 710 115000 700000 24 84 125
DNT3-O1N-800A/1000V AC 3 800 170000 1050000 26 80 135
DNT3-O1N-900A/1000V AC 3 900 250000 1500000 27 85 145
DNT3-O1N-1000A/1000V AC 3 1000 340000 2050000 28.5 88.5 150
DNT3-O1N-1100A/1000V AC 3 1100 460000 2750000 29 91 155
DNT3-O1N-1250A/1000V AC 3 1250 575000 3400000 33 103 175

DNT3 O1N

DNT3-O1N Semiconductor Fuse Features

The speed and reliability of the DNT3-O1N are built on precision engineering, resulting in a true Current Limiting Fuse.

Core Features for Ultimate Protection:

  1. aR Classification – Optimized for Semiconductors (FAQ Integrated):The DNT3-O1N is classified as an aR Fuse, which stands for “partial-range breaking capacity for the protection of semiconductors.” What does this mean for you? It means the fuse is specifically calibrated for ultra-fast operation to clear short-circuit faults, prioritizing the absolute lowest energy transmission. Unlike general-purpose industrial fuses (gG/gL), the aR Fuse characteristic delivers the speed necessary for high-value component protection.
  2. Extremely Low I^2t Value – Thermal Damage Prevention:The Low I^2t Value (Ampere-squared seconds) is the defining characteristic of the DNT3-O1N. I^2t is the measure of the damaging thermal energy passed through a circuit during a fault. By minimizing this value, the fuse ensures the energy is contained below the thermal tolerance limit of sensitive devices like IGBT Modules. This instantaneous action drastically reduces the risk of thermal runaway and catastrophic failure, safeguarding your investment in Power Conversion equipment.
  3. Robust Square Body Design:The bolt-on Square Body Fuse construction provides secure, low-resistance connections essential for high-current transfer. Encased in a high-strength ceramic body and filled with arc-quenching quartz sand, the fuse structure is designed for maximum mechanical and thermal integrity, ensuring reliable performance under severe fault conditions.

DNT3-O1N Semiconductor Fuse Advantages

Selecting the GRL DNT3-O1N for your High-Power Systems provides distinct operational advantages:

  • Maximized Component Lifespan: Direct and definitive IGBT Protection extends the life of costly power modules by instantly suppressing fault currents.
  • Reduced Downtime: The Ultra-Rapid Fuse action ensures instantaneous fault isolation, preventing cascading failures and drastically minimizing system repair time and lost productivity, boosting System Uptime.
  • Optimized for Modern Grid Voltages: The 1000V AC Fuse rating supports the trend towards higher-efficiency, high-voltage Industrial Inverters and Renewable Energy Systems, future-proofing your equipment.
  • Excellent Cycling Capability: Designed with a superior internal structure, the DNT3-O1N maintains its protective integrity through normal operational thermal cycling, providing long-term Electrical System Reliability.

DNT3-O1N Semiconductor Fuse Applications

  • Renewable Energy: Providing critical AC-side fault protection in large-scale Solar PV Inverters and in the input/output stages of Wind Turbine Converters.
  • Motor Control & Drives: Essential for VFD Protection (Variable Frequency Drives) and soft starters, ensuring continuous, reliable operation of industrial motors and machinery.
  • High-Power Conversion: Used in rectifiers, DC Link Protection in high-current industrial DC power supplies, and Uninterruptible Power Supply (UPS Systems).
  • Rail and Transportation: Protecting the power traction Thyristors and converters within modern rail systems, where system reliability is paramount.

DNT3-O1N Semiconductor Fuse FAQs

Q: Why do I need an Ultra-Rapid fuse like the DNT3-O1N instead of a standard fuse?

A: Standard fuses (like gG) are too slow to protect sensitive Power Semiconductor devices. Semiconductors like IGBTs fail in milliseconds when subjected to excessive current. The DNT3-O1N is an Ultra-Rapid Fuse designed to melt and clear a fault in microseconds, limiting the peak current and controlling the I^2t to safely below the semiconductor’s damage curve. For robust IGBT Protection and true Current Limiting action, an aR Fuse is mandatory.

Q: Is the DNT3-O1N suitable for DC applications?

A: The DNT3-O1N is explicitly engineered and rated for 1000V AC systems and is tested to the AC requirements of IEC 60269-4. While it is a High-Speed Fuse, safely interrupting a high-voltage DC fault arc (which does not have a natural zero-crossing) requires specialized DC design. For dedicated DC applications, especially in Solar PV Inverters or battery storage, you should always select a fuse with an explicit DC voltage rating to ensure maximum Fault Clearance safety and compliance.

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