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GRL DNT000-O1M Ceramic Semiconductor Fuse 1000 V DC 20-250A aR EVs Fuse Links Manufacturer

Model No.:
DNT000-O1M
Rated Voltage:
1000 V DC
Current Range:
25-250A
Breaking Capacity:
50 kA
Protection Category:
  aR
Standards:
IEC 60269-4
Certifications:
CCC, CE, TUV
Description

Semiconductor Fuse Overview

The GRL DNT000-O1M is the 1000 V DC version of the DNT000 series—a high-speed ceramic semiconductor fuse ideal for higher-voltage DC systems. This model is designed for power electronics architectures, EVs, large energy storage (ESS), and utility-scale solar inverters that require reliable, fast-acting DC protection at 1000 V. The DNT000-O1M safeguards semiconductor modules from damaging fault currents and ensures system reliability.

Given the global trend toward higher-voltage DC buses (e.g., 800–1000 V and beyond), the DNT000-O1M is positioned to serve next-generation power electronics platforms.

Semiconductor Fuse Technical Parameters

Model No. Size In (A) I2t(A2S) Pre-Arcing I2t(A2S) Fusing 0.5In Power dissipation (W) 0.8In Power dissipation (W) 1.0In Power dissipation (W) Weight (g) Mounting
DNT000-01M-25A/1000V DC 0 25 1100 6400 1 3 6 183±3% M8 11±1N·m
DNT000-01M-32A/1000V DC 0 32 1470 8200 2 5 10 183±4% M8 11±1N·m
DNT000-01M-40A/1000V DC 0 40 1840 10300 2 7 13 183±5% M8 11±1N·m
DNT000-01M-50A/1000V DC 0 50 2300 12900 3 8 15 183±6% M8 11±1N·m
DNT000-01M-63A/1000V DC 0 63 3000 16300 3 9 17 183±7% M8 11±1N·m
DNT000-01M-80A/1000V DC 0 80 3760 20800 4 12 21 183±8% M8 11±1N·m
DNT000-01M-100A/1000V DC 0 100 4700 26000 5 15 27 183±9% M8 11±1N·m
DNT000-01M-125A/1000V DC 0 125 5900 32500 6 18 33 183±10% M8 11±1N·m
DNT000-01M-160A/1000V DC 0 160 7600 41600 7 22 41 183±11% M8 11±1N·m
DNT000-01M-200A/1000V DC 0 200 9600 52000 9 27 50 183±12% M8 11±1N·m
DNT000-01M-250A/1000V DC 0 250 12000 65000 11 33 60 183±13% M8 11±1N·m

Semiconductor Fuse Features

  • High-Voltage Ceramic Body: Special ceramic formulation rated for 1000 V DC insulation and arc suppression.

  • Optimized Silver Alloy Fuse Link: Precisely engineered to handle safe interruption at 1000 V voltages.

  • Quartz Sand Arc Absorbent: Efficiently quenches internal arcs, maintaining safety and reliability.

  • M8 Mounting Interface: For straightforward installation in fuse modules or busbar systems.

  • Compact and Robust Design: Maintains mechanical integrity under vibration, thermal cycles, and high inrush conditions.

GRL DNT000 O1M Ceramic Semiconductor Fuse 2

Semiconductor Fuse Advantages

  • 1000 V DC Ready: Designed for evolving architectures in EVs, ESS, and high-power conversions.

  • Rapid Fault Clearance: Protects semiconductors via rapid disconnection of fault currents.

  • High Interrupting Capacity: Delivers 50 kA breaking capacity under demanding DC fault conditions.

  • Global Certifications & Standards Compliance: Ensures trust and adoption across international markets.

  • Reliable in Harsh Environments: Engineered for vibration, temperature extremes, and electrical transients.

  • Ease of System Integration: Standard form factor makes it compatible with fuse holders and power systems designed for high-voltage DC.

Semiconductor Fuse Applications

The DNT000-O1M is ideal for high-voltage DC use in:

  • Next-Gen EV Platforms: High-voltage battery systems, traction inverters, DC-DC modules

  • Utility-Scale Energy Storage / Grid: High-voltage ESS, DC microgrids, solar/wind converters

  • Industrial Drives / Inverters: High-power converters, motor drives in heavy-industry settings

  • High-Voltage DC Data Center Power: 380 V / 400 V DC bus architectures stepping into 1000 V designs

  • Telecom Backbone & DC Infrastructure: DC distribution systems with elevated voltage levels

Semiconductor Fuse FAQs

1、What is the difference between DNT000-M1M and DNT000-O1M?

The key difference is the voltage rating. DNT000-M1M is rated for 800 V DC, while DNT000-O1M is rated for 1000 V DC. The 1000 V version is intended for higher-voltage designs, albeit with a narrower current range (25–250 A).

2、Why is a 1000 V ceramic fuse needed?

As power systems scale up, higher-voltage DC buses are increasingly used to reduce current and losses. To protect components in these architectures, semiconductor fuses must match the higher voltage rating without compromising breaking capacity or response time.

3、Can I substitute the DNT000-O1M for the M1M in an 800 V design?

Yes, provided that the current rating and fuse characteristics match your system needs, the O1M can typically handle lower-voltage use. But for optimal performance and cost, it’s better to use the voltage-specific variant.

4、What happens when the fuse “blows”? How do I service it?

Once the DNT000-O1M fuse element opens, it must be replaced. Always turn off system power, isolate DC circuits, and replace with a GRL-certified fuse of the same ratings. Be careful of residual stored energy in capacitors or DC links.

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